Temporal isolation of surface-acoustic-wave-driven luminescence from a lateral p–n junction using pulsed techniques
✍ Scribed by J.R. Gell; M.B. Ward; P. Atkinson; S.P. Bremner; D. Anderson; C.E. Norman; M. Kataoka; C.H.W. Barnes; G.A.C. Jones; A.J. Shields; D.A. Ritchie
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 262 KB
- Volume
- 40
- Category
- Article
- ISSN
- 1386-9477
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✦ Synopsis
The authors report surface-acoustic-wave-driven luminescence from a lateral p-n junction formed by molecular-beam epitaxy regrowth of a modulation doped GaAs/AlGaAs quantum well on a patterned GaAs substrate. Pulsed techniques are used to isolate the surface-acoustic-wave-driven emission from any emission due to pick-up of the free-space electromagnetic wave. The luminescence provides a fast probe of the signals arriving at the p-n junction allowing the response of the junction to the surface-acoustic-wave to be studied in the time domain. Oscillations in the surface-acoustic-wave-driven component of the light intensity are resolved at the resonant frequency of the transducer, suggesting that the surface-acoustic-wave is transporting electrons across the junction in packets.