Surface acoustic wave device properties of (B, Al)N films on 128° Y–X LiNbO3 substrate
✍ Scribed by Jen-Hao Song; Jow-Lay Huang; Sean Wu; Sheng-Chang Wang; Jian-Long Ruan; Ding-Fwu Lii
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 416 KB
- Volume
- 256
- Category
- Article
- ISSN
- 0169-4332
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✦ Synopsis
A c-axis orientated aluminium nitride (AlN) film on a 128 • Y-X lithium niobate (LiNbO 3 ) surface acoustic wave (SAW) device which exhibit a large electromechanical coupling coefficient (k 2 ) and a high SAW velocity property, is needed for future communication applications. In this study, a c-axis orientated (B, Al)N film (with 2.6 at.% boron) was deposited on a 128 • Y-X LiNbO 3 substrate by a co-sputtering system to further boost SAW device properties. The XRD and TEM results show that the (B, Al)N films show highly aligned columns with the c-axis perpendicular to the substrate. The hardness and Young's modulus of (B, Al)N film on 128 • Y-X LiNbO 3 substrates are at least 17% and 7% larger than AlN films, respectively. From the SAW device measurement, the operation frequency characteristic of (B, Al)N film on 128 • Y-X LiNbO 3 is higher than pure AlN on it. The SAW velocity also increases as (B, Al)N film thickness increases (at fixed IDT wavelength). Furthermore, the k 2 of (B, Al)N on the IDT/128 • Y-X LiNbO 3 SAW device shows a higher value than AlN on it.