Characterization of high-k gate dielectric films using SIMS
โ Scribed by T. Yamamoto; N. Morita; N. Sugiyama; A. Karen; K. Okuno
- Book ID
- 108417849
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 201 KB
- Volume
- 203-204
- Category
- Article
- ISSN
- 0169-4332
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๐ SIMILAR VOLUMES
The thermal stability and interfacial characteristics for hafnium oxynitride (HfO x N y ) gate dielectrics formed on Si (1 0 0) by plasma oxidation of sputtered HfN films have been investigated. X-ray diffraction results show that the crystallization temperature of nitrogen-incorporated HfO 2 films
Strontium tantalate (STO) films were grown by liquid-delivery (LD) metalorganic chemical vapor deposition (MOCVD) using Sr[Ta(OEt) 5 (OC 2 H 4 OMe)] 2 as precursor. The deposition of the films was investigated in dependence on process conditions, such as substrate temperature, pressure, and concentr