๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Characterization of high-k gate dielectric films using SIMS

โœ Scribed by T. Yamamoto; N. Morita; N. Sugiyama; A. Karen; K. Okuno


Book ID
108417849
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
201 KB
Volume
203-204
Category
Article
ISSN
0169-4332

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Structural and interfacial properties of
โœ G. He; Q. Fang; L.D. Zhang ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 405 KB

The thermal stability and interfacial characteristics for hafnium oxynitride (HfO x N y ) gate dielectrics formed on Si (1 0 0) by plasma oxidation of sputtered HfN films have been investigated. X-ray diffraction results show that the crystallization temperature of nitrogen-incorporated HfO 2 films

Investigation of strontium tantalate thi
โœ M. Silinskas; M. Lisker; B. Kalkofen; E.P. Burte ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 456 KB

Strontium tantalate (STO) films were grown by liquid-delivery (LD) metalorganic chemical vapor deposition (MOCVD) using Sr[Ta(OEt) 5 (OC 2 H 4 OMe)] 2 as precursor. The deposition of the films was investigated in dependence on process conditions, such as substrate temperature, pressure, and concentr