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Characterization of high-dose implants of Co and Cr in Si by RBS

✍ Scribed by A Climent-Font; U Wätjen; H Bax; L Palmetshofer

Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
542 KB
Volume
42
Category
Article
ISSN
0042-207X

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The availability of high-current implanters, now makes it possible to perform high-dose ion-implantations. By modifying the implant species, dose, energy and substrate temperature and by choosing the suitable thermal annealing conditions buried layers below a monocrystalline Si overlayer can be for