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Characterization of HfOxNy gate dielectrics using a hafnium oxide as target

✍ Scribed by M. Liu; Q. Fang; G. He; L.Q. Zhu; L.D. Zhang

Publisher: Elsevier Science
Year: 2006
Tongue: English
Weight: 325 KB
Volume: 252
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2005.12.003

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