✦ LIBER ✦

Characterization of focused-ion-beam-induced damage in n-type silicon using Schottky contact

✍ Scribed by Xia, Ling; Wu, Wengang; Hao, Yilong; Wang, Yangyuan; Xu, Jun

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Characterization of reactive ion etching

✍ A. T. Ping; A. C. Schmitz; I. Adesida; M. Asif Khan; Q. Chen; J. W. Yang 📂 Article 📅 1997 🏛 Springer US 🌐 English ⚖ 549 KB

TCAD modeling of ion beam induced charge

✍ Sean M Hearne; David N Jamieson; Changyi Yang; Andrew S Dzurak 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 208 KB

Characterization of charge generated in

✍ T. Ohshima; T. Satoh; M. Oikawa; T. Yamakawa; S. Onoda; T. Wakasa; J.S. Laird; T 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 295 KB

Characterization of subsurface damage in

✍ Taneya, M.; Sugimoto, Y.; Akita, K. 📂 Article 📅 1989 🏛 American Institute of Physics 🌐 English ⚖ 978 KB

Schottky barrier modification and electr

✍ M.J. Legodi; F.D. Auret; S.A. Goodman; J.B. Malherbe 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 140 KB