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Characterization of subsurface damage in GaAs processed by Ga+ focused ion-beam-assisted Cl2 etching using photoluminescence

✍ Scribed by Taneya, M.; Sugimoto, Y.; Akita, K.


Book ID
121736302
Publisher
American Institute of Physics
Year
1989
Tongue
English
Weight
978 KB
Volume
66
Category
Article
ISSN
0021-8979

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Chemically-assisted ion-beam etching of
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We evaluated the lattice damage in Al Ga As / GaAs Single Quantum Well (SQW) structures caused by Chemically-0.4 0.6 Assisted Ion-Beam Etching (CAIBE) in comparison with Ion-Beam Etching (IBE) and wet etching. The damage was analyzed by measuring the Photoluminescence (PL) of the SQWs as a function