Characterization of charge generated in silicon carbide n+p diodes using transient ion beam-induced current

✍ Scribed by T. Ohshima; T. Satoh; M. Oikawa; T. Yamakawa; S. Onoda; T. Wakasa; J.S. Laird; T. Hirao; T. Kamiya; H. Itoh; A. Kinoshita; R. Tanaka; I. Nakano; M. Iwami; Y. Fukushima

• Publisher: Elsevier Science
• Year: 2005
• Tongue: English
• Weight: 295 KB
• Volume: 541
• Category: Article
• ISSN: 0168-9002
• DOI: 10.1016/j.nima.2005.01.062