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Characterization of e-beam evaporated hafnium oxide thin films on post thermal annealing

โœ Scribed by Ramzan, M.; Wasiq, M.F.; Rana, A.M.; Ali, S.; Nadeem, M.Y.


Book ID
120519055
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
989 KB
Volume
283
Category
Article
ISSN
0169-4332

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Preparation of hafnium oxide thin film b
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Electron beam evaporation was employed to deposit hafnium on silicon (100) substrate, followed by a rapid thermal oxidation process to fabricate hafnium dioxide thin film. Hafnium was transformed to hafnium oxide above a oxidizing temperature of 500 8C. An interfacial layer of hafnium silicate was o