✦ LIBER ✦

Characterization of co-sputtered Si/MgO films — a comparison with Si/SiO2 and Si/Al2O3 films

✍ Scribed by Naoto Koshizaki; Hiroyuki Umehara; Takeshi Sasaki; Toshie Oyama

Book ID: 117675801
Publisher: Elsevier Science
Year: 1997
Tongue: English
Weight: 459 KB
Volume: 8
Category: Article
ISSN: 0965-9773
DOI: 10.1016/s0965-9773(98)00035-x

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Crack-free BaTiO3 films on Si with SiO2,

Crack-free BaTiO3 films on Si with SiO2, MgO, or Al2O3 buffer layers

✍ Lipinsky, Thomas; Schubert, Juergen; Buchal, Christoph 📂 Article 📅 2005 🏛 Optical Society of America 🌐 English ⚖ 133 KB

Characterization of surface layer in Si/

Characterization of surface layer in Si/MgO·Al2O3/SiO2/Si by ultra-violet reflection spectroscopy

✍ K. Egami; M. Mikami; M. Kimura; H. Tsuya; T. Hamaguchi 📂 Article 📅 1985 🏛 Elsevier Science 🌐 English ⚖ 323 KB

Growth and characterization of ZnO films

Growth and characterization of ZnO films deposited on a monolithic Si3N4-SiO2-Si configuration

✍ B.S. Panwar; A.B. Bhattacharyya; K.C. Nagpal; R.P. Mall 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 798 KB

High-fluence Co implantation in Si, SiO2

High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si: Part I: formation of thin silicide surface films

✍ Yanwen Zhang; Thomas Winzell; Tonghe Zhang; Margaretha Andersson; Ivan A Maximov 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 488 KB

Investigation of the Si doping effect in

Investigation of the Si doping effect in β-Ga2O3 films by co-sputtering of gallium oxide and Si

✍ Kenichiro Takakura; Suguru Funasaki; Isao Tsunoda; Hidenori Ohyama; Daisuke Take 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 368 KB

Characterization of silicon carbide thin

Characterization of silicon carbide thin films grown on Si and SiO2/Si substrates

✍ P. Zanola; E. Bontempi; C. Ricciardi; G. Barucca; L.E. Depero 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 227 KB

Due to its outstanding electrical and mechanical properties, silicon carbide (SiC) is considered a leading semiconducting material for high temperature sensors. Since the piezoresistive effect in SiC is highly anisotropic and exhibits a dependence on the crystal orientation, the role of the substra