✦ LIBER ✦

Characterization of chemically prepared Si-surfaces by uv-vis and IR spectroscopic ellipsometry and surface photovoltage

✍ Scribed by H. Angermann; W. Henrion; M. Rebien; J.-T. Zettler; A. Röseler

Book ID: 117217567
Publisher: Elsevier Science
Year: 1997
Tongue: English
Weight: 653 KB
Volume: 388
Category: Article
ISSN: 0039-6028
DOI: 10.1016/s0039-6028(97)00274-4

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Application of UV-VIS and FTIR Spectrosc

Application of UV-VIS and FTIR Spectroscopic Ellipsometry to the Characterization of Wet-Chemically Treated Si Surfaces

✍ Henrion, W. ;Röseler, A. ;Angermann, H. ;Rebien, M. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 225 KB 👁 2 views

Optical characterization of Ru2Si3 by sp

Optical characterization of Ru2Si3 by spectroscopic ellipsometry, UV-VIS-NIR spectroscopy and band structure calculations

✍ W Henrion; M Rebien; V.N Antonov; O Jepsen; H Lange 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 173 KB

Surface and Thin Film Analysis (A Compen

Surface and Thin Film Analysis (A Compendium of Principles, Instrumentation, and Applications) || UV-VIS-IR Ellipsometry (ELL)

✍ Friedbacher, Gernot; Bubert, Henning 📂 Article 📅 2011 🏛 Wiley-VCH Verlag GmbH & Co. KGaA 🌐 German ⚖ 243 KB

On the Characterization of Silicon Dioxi

On the Characterization of Silicon Dioxide and Silicon Nitride by Spectroscopic Ellipsometry in the VIS and IR Regions

✍ Zettler, J.-Th. ;Weidner, M. ;Röseler, A. 📂 Article 📅 1991 🏛 John Wiley and Sons 🌐 English ⚖ 416 KB

Modelling the optical response of surfac

Modelling the optical response of surfaces measured by spectroscopic ellipsometry: application to Si and Ge

✍ M.K. Kelly; S. Zollner; M. Cardona 📂 Article 📅 1993 🏛 Elsevier Science ⚖ 43 KB

Evolution of electronically active defec

Evolution of electronically active defects during the formation of SiSiO2 interface monitored by combined surface photovoltage and spectroscopic ellipsometry measurements

✍ H. Angermann; W. Henrion; M. Rebien; K. Kliefoth; D. Fischer; J.-T. Zettler 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 307 KB

The evolution of dangling bond defects on initially H-terminated Si(111) surfaces was correlated to the wet-chemical oxide growth on an atomic scale. The dangling bond induced distribution of interface states was monitored by surface photovoltage measurements. Spectroscopic ellipsometry was used for