✦ LIBER ✦
Evolution of electronically active defects during the formation of SiSiO2 interface monitored by combined surface photovoltage and spectroscopic ellipsometry measurements
✍ Scribed by H. Angermann; W. Henrion; M. Rebien; K. Kliefoth; D. Fischer; J.-T. Zettler
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 307 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0167-9317
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✦ Synopsis
The evolution of dangling bond defects on initially H-terminated Si(111) surfaces was correlated to the wet-chemical oxide growth on an atomic scale. The dangling bond induced distribution of interface states was monitored by surface photovoltage measurements. Spectroscopic ellipsometry was used for sensing the surface morphology and oxide coverage.