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Characterization of boron charge traps at the interface of Si/SiO2 using second harmonic generation

✍ Scribed by Park, H.; Qi, J.; Xu, Y.; Varga, K.; Weiss, S. M.; Rogers, B. R.; Lupke, G.; Tolk, N.

Book ID: 111696973
Publisher: American Institute of Physics
Year: 2009
Tongue: English
Weight: 527 KB
Volume: 95
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3202420

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