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Characterization of AlN Films on Si

✍ Scribed by Gräfe, V. ;Niessner, W. ;Schalch, D. ;Scharmann, A. ;Wiese, C.

Book ID
105384357
Publisher
John Wiley and Sons
Year
1994
Tongue
English
Weight
574 KB
Volume
145
Category
Article
ISSN
0031-8965

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Aluminum nitride (AlN) thin films have been deposited on Si(1 1 1) substrates by using reactive-rf-magnetron-sputtering at 250 °C. The crystalline quality and orientation of the films have been studied by X-ray diffraction (XRD). We have observed that the films grow with c-or a-axis orientation. The