The electron transport in a-Si:H,F/a-Si,Ge:H,F multilayers is analyzed. We use the dark conductivity activation energy Ea, d, its preexponentia[ factor a0, and the photo conductivity activation energy Ea, ph and its exponent q to highlight the asymmetry between transport parallel and perpendicular t
โฆ LIBER โฆ
Characterization of a -Si:H/ a -Ge:H superlattices by Raman scattering
โ Scribed by Santos, P. V.; Ley, L.
- Book ID
- 125524688
- Publisher
- The American Physical Society
- Year
- 1987
- Tongue
- English
- Weight
- 643 KB
- Volume
- 36
- Category
- Article
- ISSN
- 1098-0121
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