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Raman scattering and photoluminescence characterization of Ge/Si strained-layer superlattices grown by phase-locked epitaxy

✍ Scribed by H. Okumura; K. Miki; K. Sakamoto; T. Sakamoto; K. Endo; S. Yoshida


Book ID
107925725
Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
394 KB
Volume
41-42
Category
Article
ISSN
0169-4332

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## Abstract Improvement of hexagonal InN film quality grown by metal‐organic vapor phase epitaxy has been challenged by changing the ambient‐gas pressure in 87–320 kPa (∼1–3 atm.). The growth temperature and the source‐gas supply ratio, the so‐called V/III ratio, were optimized at each ambient‐gas