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Strain relaxation mechanisms in Si1−xGexlayers grown by solid-phase epitaxy: Influence of the layer composition and growth temperature

✍ Scribed by A. Rodríguez; T. Rodríguez; A. Kling; J. C. Soares; M. F. Da Silva; C. Ballesteros


Book ID
107458024
Publisher
Springer US
Year
1999
Tongue
English
Weight
317 KB
Volume
28
Category
Article
ISSN
0361-5235

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