Characterization and production metrology of gate dielectric films
โ Scribed by Alain C. Diebold; Jesse Canterbury; Will Chism; Curt Richter; Nhan Nguyen; Jim Ehrstein; Chad Weintraub
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 188 KB
- Volume
- 4
- Category
- Article
- ISSN
- 1369-8001
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
The thermal stability and interfacial characteristics for hafnium oxynitride (HfO x N y ) gate dielectrics formed on Si (1 0 0) by plasma oxidation of sputtered HfN films have been investigated. X-ray diffraction results show that the crystallization temperature of nitrogen-incorporated HfO 2 films
## Abstract A technique for the characterization of microwave dielectric properties of high dielectric constant thick films at room temperature is proposed, using multilayered coplanar waveguide transmission lines with high dielectric constant thick films deposited over the lines.Besides the simpli