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Characterization and field emission properties of ZnMgO nanowires fabricated by thermal evaporation process

✍ Scribed by Ramin Yousefi; Farid Jamali Sheini; Muhamad Rasat Muhamad; Mahendra A. More

Book ID
113913975
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
896 KB
Volume
12
Category
Article
ISSN
1293-2558

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## Abstract Silicon nanowires (NWs) fabricated by thermal evaporation of SiO were studied by cathodoluminescence. A band around 1550 nm (0.8 eV) was observed. It appears above 225 K and its intensity increases with increasing temperature. The broad band consists of the defect‐related D1 and D2 line