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Characteristics of reactively sputtered niobium nitride thin films as diffusion barriers for Cu metallization

โœ Scribed by C. Huang; C. Lai; P. Tsai; H. Huang; J. Lin; C. Lee


Book ID
124149020
Publisher
The Korean Institute of Metals and Materials
Year
2013
Tongue
English
Weight
479 KB
Volume
9
Category
Article
ISSN
1738-8090

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Electroless deposited Co(W,P) thin films were evaluated as diffusion barriers for copper metallization. Capacitance versus time measurements of MOS structures as well as SIMS depth profiles indicate that 30-nm-thick films can function as effective barriers against copper diffusion after thermal trea