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Characteristics of doped oxides and their use in silicon device fabrication

✍ Scribed by D.M. Brown; M. Garfinkel; M. Ghezzo; E.A. Taft; A. Tenney; J. Wong


Publisher
Elsevier Science
Year
1972
Tongue
English
Weight
853 KB
Volume
17
Category
Article
ISSN
0022-0248

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Silicon Coulomb blockade structures have been fabricated from silicon on insulator substrates and electrically characterised. The devices were realized as a single Si island connected to two electron reservoirs by Si tunnelling barriers. The silicon base substrate served as a backgate. Clear Coulomb