Characteristics of metal/tunnel-oxide/n/p+ silicon switching devices—II: Two-dimensional effects in oxide-isolated structures

✍ Scribed by L. Faraone; J.G. Simmons; F-L. Hsueh; U.K. Mishra

• Publisher: Elsevier Science
• Year: 1982
• Tongue: English
• Weight: 856 KB
• Volume: 25
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/0038-1101(82)90117-4