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Characteristics and utilization of a new class of low on-resistance MOS-gated power device

โœ Scribed by Jih-Sheng Lai; Byeng-Mun Song; Rui Zhou; Hefner, A., Jr.; Berning, D.W.; Chih-Chieh Shen


Book ID
111973360
Publisher
IEEE
Year
2001
Tongue
English
Weight
154 KB
Volume
37
Category
Article
ISSN
0093-9994

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โœ Chen, Wen; Floberg, Henrik; Qiu, Shui-Sheng ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 157 KB ๐Ÿ‘ 2 views

The new analytical method presented in this paper extends the principle of the equivalent small parameter method (ESP, an improved perturbation technique) to analyse and design Class E power ampli"ers. Using this method the analytical expression for the output voltage (or current), containing the fu