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Characterising aluminium oxide barrier layers on flexible substrates deposited by atomic layer deposition

✍ Scribed by Chang, R.-C.; Hou, H.-T.; Tsai, F.-T.; Jhu, P.-S.

Book ID
125911964
Publisher
Maney Publishing
Year
2014
Tongue
English
Weight
179 KB
Volume
18
Category
Article
ISSN
1432-8917

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Diffusion barrier materials, TiN and WN, were deposited by atomic layer deposition (ALD). The chlorine concentration of the TiN film was as low as 1.2 at.-%, and resistivity was below 200 lX cm. Ultra high aspect ratio (AR = 85) trenches were used to assess step coverage. Tungsten nitride film, depo