Characterisation of AlGaN MSM by Light Beam Induced Current technique
โ Scribed by Bogdan Paszkiewicz; Adam Szyszka; Mateusz Wosko; Wojciech Macherzynski; Regina Paszkiewicz; Marek Tlaczala
- Publisher
- John Wiley and Sons
- Year
- 2006
- Tongue
- English
- Weight
- 651 KB
- Volume
- 3
- Category
- Article
- ISSN
- 1862-6351
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Knowledge of the correlation between the nature of recombining defects (extended crystallographic defects, impurities etc.) and the local electrical properties of wafers are necessary for the control of semiconductor materials. The control of the evolution of the electrical properties during the pro
The purpose of this paper is the simulation of the minority-cartier recombination in the case of a recombining grain boundary (GB) surrounded by a denuded zone. This denuded zone could be due to the segregation of impurities (metals and oxygen) to the GB plane. A direct Monte Carlo simulation is use