Knowledge of the correlation between the nature of recombining defects (extended crystallographic defects, impurities etc.) and the local electrical properties of wafers are necessary for the control of semiconductor materials. The control of the evolution of the electrical properties during the pro
โฆ LIBER โฆ
Control of buried junctions by light-beam-induced current mapping
โ Scribed by J.P. Boyeaux; K. Masri; M. Gavand; L. Mayet; B. Montegu; A. Laugier
- Publisher
- Elsevier Science
- Year
- 1990
- Tongue
- English
- Weight
- 523 KB
- Volume
- 5
- Category
- Article
- ISSN
- 0921-5107
No coin nor oath required. For personal study only.
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The purpose of this paper is the simulation of the minority-cartier recombination in the case of a recombining grain boundary (GB) surrounded by a denuded zone. This denuded zone could be due to the segregation of impurities (metals and oxygen) to the GB plane. A direct Monte Carlo simulation is use