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Channel width dependence of mechanical stress effects induced by shallow trench isolation on device performance of nanoscale nMOSFETs

โœ Scribed by Seonhaeng Lee; Dongwoo Kim; Cheolgyu Kim; Chiho Lee; Jeongsoo Park; Bongkoo Kang


Book ID
119326703
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
687 KB
Volume
52
Category
Article
ISSN
0026-2714

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