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Measurement of mechanical stresses induced by hybrid shallow-trench-isolation for dynamic random access memory using recess channel array transistor structure

✍ Scribed by Seonhaeng Lee; Dongwoo Kim; Cheolgyu Kim; T.K. Oh; S.Y. Cha; S.J. Hong; Bongkoo Kang


Book ID
113797917
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
684 KB
Volume
91
Category
Article
ISSN
0167-9317

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