Shallow-Trench-Isolation (STI)-Induced Mechanical-Stress-Related Kink-Effect Behaviors of 40-nm PD SOI NMOS Device

✍ Scribed by Su, V.C.; Kuo, J.B.; Lin, I.S.; Guan-Shyan Lin; Chen, D.C.; Chune-Sin Yeh; Cheng-Tzung Tsai; Ma, M.

• Book ID: 114619427
• Publisher: IEEE
• Year: 2008
• Tongue: English
• Weight: 717 KB
• Volume: 55
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2008.922858