Cathodoluminescence investigation of SiGe quantum wires fabricated on V-groove patterned Si substrates
โ Scribed by V. Higgs; E.C. Lightowlers; N. Usami; Y. Shiraki; T. Mine; S. Fukatsu
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 300 KB
- Volume
- 150
- Category
- Article
- ISSN
- 0022-0248
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๐ SIMILAR VOLUMES
An AlGaAs(90 ร )/GaAs(45 ร ) quantum wire superlattice (QWR-SL) with excellent size uniformity is grown on a 4.8 ยตm pitch V-grooved substrate by flow rate modulation epitaxy at a specific growth temperature (โผ630 โข C). In the low temperature (12 K) photoluminescence spectrum of the AlGaAs(90 ร )/GaAs(4
Self-ordered InGaAs/GaAs quantum wires (QWRs) were obtained on (100) GaAs Vgrooved substrates by low-pressure metal-organic vapor phase epitaxy. Different structural and optical properties of compressively strained InGaAs wires grown on grooves exhibiting (111)A-like and (311)-like oriented facets w