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Carrier separation analysis for clarifying carrier conduction and degradation mechanisms in high-k stack gate dielectrics

✍ Scribed by Wataru Mizubayashi; Naoki Yasuda; Kenji Okada; Hiroyuki Ota; Hirokazu Hisamatsu; Kunihiko Iwamoto; Koji Tominaga; Katsuhiko Yamamoto; Tsuyoshi Horikawa; Toshihide Nabatame; Hideki Satake; Akira Toriumi


Book ID
108210541
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
300 KB
Volume
45
Category
Article
ISSN
0026-2714

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Channel hot-carrier degradation in pMOS
✍ E. Amat; T. Kauerauf; R. Degraeve; R. RodrΓ­guez; M. NafrΓ­a; X. Aymerich; G. Groe πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 319 KB

A comparison between pMOS and nMOS short channel transistors with high-k dielectric subjected to channel hot-carrier (CHC) stress is presented. Smaller CHC degradation is observed in pMOS devices. At high temperature, the CHC degradation increases for pMOS and nMOS. The temperature dependence of the