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Carrier recombination at silicon–silicon nitride interfaces fabricated by plasma-enhanced chemical vapor deposition

✍ Scribed by Schmidt, Jan; Aberle, Armin G.


Book ID
111677276
Publisher
American Institute of Physics
Year
1999
Tongue
English
Weight
442 KB
Volume
85
Category
Article
ISSN
0021-8979

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Plasma-enhanced chemical vapour deposite
✍ S. Ghosh; D. N. Bose 📂 Article 📅 1994 🏛 Springer US 🌐 English ⚖ 421 KB

Silicon nitride (SiNx) films of varying stoichiometry (x= 1.04, 1.39 and 1.63) were deposited on silicon substrates at 250 °C by plasma-enhanced chemical vapour deposition (PECVD). The N/Si ratios were determined by electron spectroscopy for chemical analysis (ESCA) and Rutherford backscattering (RB