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Carrier density fluctuation noise in silicon junction field effect transistors at low temperatures

โœ Scribed by M.J. Churchill; P.O. Lauritzen


Publisher
Elsevier Science
Year
1971
Tongue
English
Weight
575 KB
Volume
14
Category
Article
ISSN
0038-1101

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Low noise field-effect transistor for in
โœ R.G. Beck; M.A. Eriksson; R.M. Westervelt; K.L. Campman; A.C. Gossard ๐Ÿ“‚ Article ๐Ÿ“… 1996 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 103 KB

We have fabricated a strain-sensing field-effect transistor (FET) from a GaAs/AlGaAs heterostructure containing a near surface two-dimensional electron gas. At 77 K the FET shows a typical transconductance of 30 ยตS and small signal drain-source resistance of 30 M . The charge noise has a flat spectr