Low noise field-effect transistor for integrated strain sensing in microelectromechanical systems at 77 K
✍ Scribed by R.G. Beck; M.A. Eriksson; R.M. Westervelt; K.L. Campman; A.C. Gossard
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 103 KB
- Volume
- 20
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
We have fabricated a strain-sensing field-effect transistor (FET) from a GaAs/AlGaAs heterostructure containing a near surface two-dimensional electron gas. At 77 K the FET shows a typical transconductance of 30 µS and small signal drain-source resistance of 30 M . The charge noise has a flat spectrum at high frequencies with magnitude 0.7e Hz -1/2 and a 1/ f noise corner of approximately 1 kHz. The strain response, due to the piezoelectric effect, shows a noise limited strain sensitivity < 4 × 10 -9 Hz -1/2 . Integrated strain sensing FETs offer advantages in small GaAs/AlGaAs microelectromechanical systems.