We have calculated the exciton binding energy in an Al x Ga 1-x As/GaAs double quantum well by a variational envelope function procedure using a simple two-band model. The influence of the shift of the AlAs separating barrier, introducing an asymmetry into the system, on the value of the exciton bin
Carrier density effects on the exciton binding energy in double quantum well systems
✍ Scribed by A. Hernández-Cabrera
- Publisher
- Elsevier Science
- Year
- 1999
- Tongue
- English
- Weight
- 110 KB
- Volume
- 4
- Category
- Article
- ISSN
- 1386-9477
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✦ Synopsis
Carrier density e ects on the dynamics of an electrically pumped exciton, created by hole-assisted, electron resonant tunneling in an asymmetric coupled quantum well system, has been studied self-consistently. Calculations show that, ÿrst, the binding energy and the oscillation period decrease with increasing carrier concentration, the charge oscillation being nonperiodic for sheet densities greater than 5 ×10 10 cm -2 (for the proposed sample). Second, a transition from excitonic to electron-hole plasma states occurs at densities ranging from 5 ×10 8 to 2:5 ×10 10 cm -2 . As a consequence, the present work shows that many-body e ects are necessary to obtain accurate results in calculating tunneling electromagnetic radiation.
📜 SIMILAR VOLUMES
The binding energy of the ground-state exciton in type-II quantum well structures, staggered and misaligned configurations, is calculated with a variational method. The resulting binding energy in the InAs/GaSb structure for the zero field case is much larger than that reported previously by other a