Binding energy of the exciton in type-II quantum wells

✍ Scribed by Min Cai; Youyan Liu; Wenming Liu; Tongjun Yu

• Publisher: Elsevier Science
• Year: 1992
• Tongue: English
• Weight: 383 KB
• Volume: 176
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/0921-4526(92)90239-o

✦ Synopsis

The binding energy of the ground-state exciton in type-II quantum well structures, staggered and misaligned configurations, is calculated with a variational method. The resulting binding energy in the InAs/GaSb structure for the zero field case is much larger than that reported previously by other authors. The effect of the electric field on the exciton binding energy is investigated. It is found that the behavior of the exciton formed by the electron and the hole within the right neighbour well of the electron is obviously different from that formed by the electron and the hole within the left neighbour well of the electron, that is, with increasing electric field, the binding energy decreases for the right-well hole exciton, and increases for the left-well hole exciton. Also, the semiconductor-semimetal transition is effectively influenced by the electric field.