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Carbon Nanowalls Grown by Microwave Plasma Enhanced Chemical Vapor Deposition

✍ Scribed by Y. Wu; P. Qiao; T. Chong; Z. Shen


Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
252 KB
Volume
14
Category
Article
ISSN
0935-9648

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The effects of hydrogen on GaN growth by remote plasma-enhanced metal-organic chemical vapor deposition (RPE-MOCVD) were investigated. Hydrogen addition changed the gas-phase reaction in the plasma and resulted in a Ga excess growth condition by scavenging activated nitrogen species, resulting in de