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Carbon and germanium distributions in Si1−x−yGexCy layers epitaxially grown on Si(001) by RTCVD

✍ Scribed by C. Guedj; X. Portier; A. Hairie; D. Bouchier; G. Calvarin; B. Piriou

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Local structure of strain-compensated ep

✍ H.J. Osten; B. Dietrich; H. Rücker; M. Methfessel 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 251 KB

Bulk and surface structural properties o

✍ C. Guedj; J. Boulmer; D. Bouchier; C. Clerc; G. Calvarin; C. Godet; P. Roca i Ca 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 431 KB

Photoluminescence studies of epitaxial S

✍ H. Katsumata; N. Kobayashi; Y. Makita; M. Hasegawa; N. Hayashi; H. Shibata; S. U 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 485 KB

Distribution of germanium in Si1 −xGex(x

✍ V. S. Bagaev; V. S. Krivobok; V. P. Martovitsky; A. V. Novikov 📂 Article 📅 2009 🏛 Springer 🌐 English ⚖ 988 KB

Growth of pseudomorphic Si1−yCy and Si1−

✍ Eric Fogarassy; Adriana Grob; Jean-Jacques Grob; Dominique Muller; Bernard Prévo 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 639 KB

Structural investigations of SiGe epitax

✍ Faleev, N.; Sustersic, N.; Bhargava, N.; Kolodzey, J.; Kazimirov, A.Yu.; Honsber 📂 Article 📅 2013 🏛 Elsevier Science 🌐 English ⚖ 771 KB