Capacitance–voltage characteristics of weakly coupled superlatticesGaAs/AlGaAs

✍ Scribed by G.K. Rasulova; M.V. Yakimov; V.I. Kadushkin

• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 117 KB
• Volume: 24
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.1998.0596

✦ Synopsis

A complex study of weakly coupled low doped superlattices GaAs/Al 0.3 Ga 0.7 As with large current hysteresis by I -V ; C-V and d I /dV -V characteristics is presented. The study of the current branches and corresponding C-V transition lines connecting the low-and highconductance states shows that the shape of the C-V transition lines differs drastically with respect to the sweep direction. The observed abrupt reduction of the capacitance signal on the down-sweep transition line is the result of depletion layer formation or domain boundary expansion. The discontinuous evolution of the capacitance signal on the up-sweep transition line is due to domain boundary shrinkage.