Capacitance-voltage and impedance-spectroscopy characteristics of nanoplate EISOI capacitors

✍ Scribed by Abouzar, Maryam H. ;Moritz, Werner ;Schöning, Michael J. ;Poghossian, Arshak

• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 535 KB
• Volume: 208
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.201001211

✦ Synopsis

Abstract

Frequency‐dependent capacitance–voltage (C–V) and impedance‐spectroscopy characteristics of nanoplate capacitive field‐effect electrolyte‐insulator‐silicon‐on‐insulator (EISOI) structures with various thicknesses (30, 60 and 350 nm) of the top p‐Si layer are investigated for the first time. The frequency‐dependent C–V curves of EISOI structures show an unusual behaviour, which significantly differs from that of conventional EIS structures. Due to the large series resistance of the nanoplate top Si, the C–V curves of the EISOI structures show stronger frequency dependence in the accumulation region. In addition, C–V curves show typical low‐frequency behaviour even at higher frequencies (up to 8 kHz). An equivalent circuit of an EISOI structure is discussed taking into account the series resistance of the nanoplate top Si.