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Calculations of point defect concentrations and nonstoichiometry in GaAs

✍ Scribed by R.M. Logan; D.T.J. Hurle

Book ID
108357110
Publisher
Elsevier Science
Year
1971
Tongue
English
Weight
917 KB
Volume
32
Category
Article
ISSN
0022-3697

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The nature of the main electron trap, EL2, in undoped scniiinsulating GaAs crystals have been studied both qualitatively and quantitatively. It has been shown that point tlefects which, most probably, are responsible for the EL2 level are antisite Aso, defwts or ( A s ~-V G ~) coiiiplexes which are