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Prediction of equilibrium defect concentrations in GaAs and ZnSe

โœ Scribed by Robert W. Jansen; Otto F. Sankey


Publisher
Elsevier Science
Year
1987
Tongue
English
Volume
64
Category
Article
ISSN
0038-1098

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Defect Formation in Heterovalent ZnSe/Ga
โœ T. Nakayama; R. Kobayashi; K. Sano; M. Murayama ๐Ÿ“‚ Article ๐Ÿ“… 2002 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 424 KB

simulations were performed to study the defect formation in ZnSe/GaAs heterovalent epitaxy. It was shown that when ZnSe is grown on the GaAs (001) As-rich cรฐ4 ร‚ 4รž surface, As antisites become the origin of defects such as dislocations, while ZnSe grows in a step-flow manner on the GaAs (110) รฐ1 ร‚ 2