Defect Formation in Heterovalent ZnSe/Ga
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T. Nakayama; R. Kobayashi; K. Sano; M. Murayama
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Article
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2002
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John Wiley and Sons
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English
โ 424 KB
simulations were performed to study the defect formation in ZnSe/GaAs heterovalent epitaxy. It was shown that when ZnSe is grown on the GaAs (001) As-rich cรฐ4 ร 4ร surface, As antisites become the origin of defects such as dislocations, while ZnSe grows in a step-flow manner on the GaAs (110) รฐ1 ร 2