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calculation of the oxygen vacancy in ZnO

โœ Scribed by Lany, Stephan; Zunger, Alex

Book ID
120524001
Publisher
The American Physical Society
Year
2010
Tongue
English
Weight
140 KB
Volume
81
Category
Article
ISSN
1098-0121

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## Abstract It is shown that the intensity of the oxygen vacancy (V~O~) related emission in ZnO at 2.45 eV correlates to the concentration of the donor level E4. E4 is located 530 meV below the conduction band and attributed to the V~O~^0/++^ recharging. Deep level transient spectroscopy (DLTS) exp