Negative U-properties of the oxygen-vacancy in ZnO

✍ Scribed by Daniel Pfisterer; Joachim Sann; Detlev M. Hofmann; Bruno Meyer; Thomas Frank; Gerhard Pensl; R. Tena-Zaera; J. Zúñiga-Pérez; C. Martinez-Tomas; V. Muñoz-Sanjosé

• Publisher: John Wiley and Sons
• Year: 2006
• Tongue: English
• Weight: 325 KB
• Volume: 3
• Category: Article
• ISSN: 1862-6351
• DOI: 10.1002/pssc.200564650

✦ Synopsis

Abstract

It is shown that the intensity of the oxygen vacancy (V~O~) related emission in ZnO at 2.45 eV correlates to the concentration of the donor level E4. E4 is located 530 meV below the conduction band and attributed to the V~O~^0/++^ recharging. Deep level transient spectroscopy (DLTS) experiments with optical excitation locate the V~O~^2+/+^ level position 140 meV below the conduction band and give evidence for the “negative‐ U” properties of the oxygen vacancies in ZnO. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)