## Abstract It is shown that the intensity of the oxygen vacancy (V~O~) related emission in ZnO at 2.45 eV correlates to the concentration of the donor level E4. E4 is located 530 meV below the conduction band and attributed to the V~O~^0/++^ recharging. Deep level transient spectroscopy (DLTS) exp
β¦ LIBER β¦
Properties of the oxygen vacancy in ZnO
β Scribed by D.M. Hofmann; D. Pfisterer; J. Sann; B.K. Meyer; R. Tena-Zaera; V. Munoz-Sanjose; T. Frank; G. Pensl
- Publisher
- Springer
- Year
- 2007
- Tongue
- English
- Weight
- 377 KB
- Volume
- 88
- Category
- Article
- ISSN
- 1432-0630
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