𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Properties of the oxygen vacancy in ZnO

✍ Scribed by D.M. Hofmann; D. Pfisterer; J. Sann; B.K. Meyer; R. Tena-Zaera; V. Munoz-Sanjose; T. Frank; G. Pensl


Publisher
Springer
Year
2007
Tongue
English
Weight
377 KB
Volume
88
Category
Article
ISSN
1432-0630

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Negative U-properties of the oxygen-vaca
✍ Daniel Pfisterer; Joachim Sann; Detlev M. Hofmann; Bruno Meyer; Thomas Frank; Ge πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 325 KB

## Abstract It is shown that the intensity of the oxygen vacancy (V~O~) related emission in ZnO at 2.45 eV correlates to the concentration of the donor level E4. E4 is located 530 meV below the conduction band and attributed to the V~O~^0/++^ recharging. Deep level transient spectroscopy (DLTS) exp

Oxygen vacancies in ZnO
✍ F. Leiter; H. Alves; D. Pfisterer; N.G. Romanov; D.M. Hofmann; B.K. Meyer πŸ“‚ Article πŸ“… 2003 πŸ› Elsevier Science 🌐 English βš– 206 KB
Electronic structure of oxygen vacancy i
✍ W.-J. Lee; B. Ryu; K.J. Chang πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 393 KB

We perform first-principles theoretical calculations to investigate the defect properties of oxygen vacancy (V O ) in crystalline InGaO 3 (ZnO) m (m ΒΌ 3). In a flat boundary structure, in which Ga atoms are located on a single plane, various configurations of V O exist. We find that neutral V O at a