Oxygen vacancies in ZnO
β Scribed by F. Leiter; H. Alves; D. Pfisterer; N.G. Romanov; D.M. Hofmann; B.K. Meyer
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 206 KB
- Volume
- 340-342
- Category
- Article
- ISSN
- 0921-4526
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## Abstract It is shown that the intensity of the oxygen vacancy (V~O~) related emission in ZnO at 2.45 eV correlates to the concentration of the donor level E4. E4 is located 530 meV below the conduction band and attributed to the V~O~^0/++^ recharging. Deep level transient spectroscopy (DLTS) exp
We perform first-principles theoretical calculations to investigate the defect properties of oxygen vacancy (V O ) in crystalline InGaO 3 (ZnO) m (m ΒΌ 3). In a flat boundary structure, in which Ga atoms are located on a single plane, various configurations of V O exist. We find that neutral V O at a