Boron and germanium 6-doped silicon samples were studied using SIMS depth profiling on a Cameca IMS-4F instrument with O,', N z + and Cs' primary beams at various energies and incidence angles. The depth resolution characteristics were compared. We show that, with experimental conditions being the s
C-V profiling of delta layers in silicon by quantum and classical approaches
β Scribed by A.C.G. Wood; A.G. O'Neill
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 228 KB
- Volume
- 15
- Category
- Article
- ISSN
- 0167-9317
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