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C-doped semi-insulating GaN HFETs on sapphire substrates with a high breakdown voltage and low specific on-resistance

✍ Scribed by Choi, Y. C. ;Shi, J. ;Pophristic, M. ;Spencer, M. G. ;Eastman, L. F.

Book ID: 127329677
Publisher: AVS (American Vacuum Society)
Year: 2007
Tongue: English
Weight: 588 KB
Volume: 25
Category: Article
ISSN: 0734-211X
DOI: 10.1116/1.2794058

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