✦ LIBER ✦

[IEEE IC's (ISPSD) - Orlando, FL, USA (2008.05.18-2008.05.22)] 2008 20th International Symposium on Power Semiconductor Devices and IC's - High power AlGaN/GaN HFET with a high breakdown voltage of over 1.8 kV on 4 inch Si substrates and the suppression of current collapse

✍ Scribed by Ikeda, Nariaki; Kaya, Syuusuke; Li, Jiang; Sato, Yoshihiro; Kato, Sadahiro; Yoshida, Seikoh

No coin nor oath required. For personal study only.

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