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Buffer free MOCVD growth of GaN on 4H-SiC: Effect of substrate treatments and UV-photoirradiation

✍ Scribed by Losurdo, Maria ;Giangregorio, Maria M. ;Bruno, Giovanni ;Kim, Tong-Ho ;Choi, Soojeong ;Brown, April

Book ID: 105363608
Publisher: John Wiley and Sons
Year: 2006
Tongue: English
Weight: 684 KB
Volume: 203
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.200565154

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✦ Synopsis

Abstract

GaN has been grown directly on the Si‐face 4H‐SiC(0001) substrates using remote plasma‐assisted metalorganic chemical vapour deposition (RP‐MOCVD) with UV‐light irradiation. The effects of substrate pre‐treatments and UV‐photoirradiation of the growth surface on GaN nucleation and film morphology are investigated. Optical data from spectroscopic ellipsometry measurements and morphological data show an improvement in nucleation and material quality with UV‐light irradiation. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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